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Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation--
Mitsuru YAMAJI Kenji TANIGUSHI Chihiro HAMAGUCHI Kazuo SUKEGAWA Seiichiro KAWAMURA
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
SOI-MOSFET, hot carrier, photon emission, hole trap, impact-ionization, electron-hole recombination,
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Optical and electrical measurements of thin film n-channel SOI-MOSFETs reveal that the exponential tail in photon emission spectra originates from electron-hole recombination. Bremsstrahlung radiation model as a physical mechanism of photon emission was experimentally negated. Negative threshold voltage shift at the initial stage of high field stress is found to be caused by hole trapping in buried oxide. Subsequent turnover characteristics is explained by a competing process between electron trapping in the front gate oxide and hole trapping in the buried oxide. As to the degradation of transconductance, generated surface state as well as trapped holes in the buried oxide which reduce vertical electric field in SOI film are involved in the complicate degradation of transconductance.