Hot Carrier Evaluation of TFT by Emission Microscopy

Junko KOMORI
Jun-ichi MITSUHASHI
Shigenobu MAEDA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E77-C    No.3    pp.367-372
Publication Date: 1994/03/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
hot carrier,  thin film transistor (TFT),  emission microscopy,  plasma hydrogenation,  

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Summary: 
A new evaluation technique of hot carrier degradation is proposed and applied to practical evaluation of p-channel polycrystalline silicon thin film transistors (TFT). The proposed technique introduces emission microscopy which is particularly effective for evaluating TFT devices. We have developed an automatic measurement system in which measurement of the electrical characteristics and monitoring the photo emission are done simultaneously. Using this system, we have identified the dominant mechanism of hot carrier degradation in TFTs, and evaluated the effect of plasma hydrogenation on hot carrier degradation.