Bandgap Narrowing and Incomplete Ionization Calculations for the Temperature Range from 40 K up to 400 K


IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.2   pp.287-297
Publication Date: 1994/02/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
room-and low-temperature electronics,  silicon phenomena,  bandgap,  narrowing,  incomplete impurity ionization,  modelling and calculation,  

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The theoretical modelling bandgap narrowing and percentage of ionized impurity atoms for uncompensated uniformly doped silicon containing conventional impurities (B, P, As, Sb) under thermodynamic-equilibrium conditions is presented. As distinct from existing approaches, this modelling is valid for impurity concentrations up to electrically-active-impurity-concentration limits and for the temperature range from 40 K up to 400 K. A relevant and efficient calculation software is proposed. The results of the calculations are compared with the results extracted by many authors from measurement data. A good agreement between these results is noted and possible reasons of some discrepancies are pointed out. The present modelling and software can be used for investigation of BJT charge-neutral regions as well as diffused or implanted resistors.