Influence of Energy Transport Related Effects on NPN BJT Device Performance and ECL Gate Delay Analysed by 2D Parallel Mixed Level Device/Circuit Simulation

Matthias STECHER  Bernd MEINERZHAGEN  Ingo BORK  Joachim M. J. KRÜCKEN  Peter MAAS  Walter L. ENGL  

IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.2   pp.200-205
Publication Date: 1994/02/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Coupled Device & Circuit Modeling
hydrodynamic model,  velocity overshoot,  circuit performance,  

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The consequences of energy transport related effects like velocity overshoot on the performance of bipolar transistors have already been studied previously. So far however most of the applied models were only 1D and it remained unclear whether such effects would have a significant influence on important quantities like ECL gate delay accessible only on the circuit level. To the authors' best knowledge in this paper for the first time the consequences of energy transport related effects on the circuit level are investigated in a rigorous manner by mixed level device/circuit simulation incorporating full 2D numerical hydrodynamic models on the device level.