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Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs
Shirun HO Masaki OOHIRA Osamu KAGAYA Aya MORIYOSHI Hiroshi MIZUTA Ken YAMAGUCHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
frequency dependent characteristics, dynamic simulation, deep traps, quasi-Fermi levels, GaAs MESFETs,
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A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.