Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer

Yoshiroh TSUBOI  Claudio FIFGNA  Enrico SANGIORGI  Bruno RICCÒ  Tetsunori WADA  Yasuhiro KATSUMATA  Hiroshi IWAI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.2   pp.174-178
Publication Date: 1994/02/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
Keyword: 
bipolar transistor,  i-layer,  collector signal delay,  velocity overshoot,  

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Summary: 
We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disappear. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.