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Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer
Yoshiroh TSUBOI Claudio FIFGNA Enrico SANGIORGI Bruno RICCÒ Tetsunori WADA Yasuhiro KATSUMATA Hiroshi IWAI
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
bipolar transistor, i-layer, collector signal delay, velocity overshoot,
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We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disappear. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.