A Unified Model for the Simulation of Small-Geometry Devices

Anna PIERANTONI  Paolo CIAMPOLINI  Andrea LIUZZO  Giorgio BACCARANI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.2   pp.139-147
Publication Date: 1994/02/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
TCAD,  device simulation,  hot-electron effects,  electro-thermal effects,  

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Summary: 
In this paper, the formulation of unified transport model is reviewed along with its implementation in a three-dimensional device simulator. The model features an accurate description of the energy exchange among electrons, holes and lattice, and is therefore suitable for self-consistently simulating thermal effects and non-stationary phenomena, as well as their possible interactions. Despite the model complexity, it is shown that the computational effort required for its solution is reasonably close to more conventional approaches. Application examples are also given, in which both unipolar and bipolar devices are simulated, discussing the relative importance of different phenomena and highlighting the simultaneous occurrence of carrier and lattice heating.