Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS

Kazuhiko KAI  Shigeki KURODA  Kenji NISHI  

IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.2   pp.129-133
Publication Date: 1994/02/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
process simulation,  model for silicide growth,  SALICIDE,  silicidation,  titanium disilicide,  MOSFET,  

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A two-dimensional self-aligned silicide (SALICIDE) model has been developed using the general-purpose process simulator OPUS. A new two-dimensional growth model is proposed. Utilizing a newly-difined effective silicide thickness, the model accounts both silicon-diffusion and metal-diffusion limited silicide growth. Silicide lateral-growth along a sidewall spacer is successfully simulated for Si-diffusion limited silicide growth. Complete MOSFET process simulation with a SALICIDE process is demonstrated for the first time.