
For FullText PDF, please login, if you are a member of IEICE,
or go to Pay Per View on menu list, if you are a nonmember of IEICE.

Monte Carlo Simulation of Ion Implantation for ThreeDimensional Structures Using an Octree
Hannes STIPPEL Siegfried SELBERHERR
Publication
IEICE TRANSACTIONS on Electronics
Vol.E77C
No.2
pp.118123 Publication Date: 1994/02/25
Online ISSN:
DOI:
Print ISSN: 09168516 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Process Simulation Keyword: ion implantation, Monte Carlo method, point location, octree,
Full Text: PDF(472.4KB)>>
Summary:
A fully threedimensional simulation tool for modeling the ion implantation in arbitrarily complex threedimensional structures is described. The calculation is based on the Monte Carlo (MC) method. For MC simulations of realistic threedimensional structures the key problem is the CPUtime consumption which is primarily caused by two facts. (1) A large number of ion trajectories (about 10^{7}) has to be simulated to get results with reasonable low statistical noise. (2) The point location problem is very complex in the threedimensional space. Solutions for these problems are given in this paper. To reduce the CPUtime for calculating the numerous ion trajectories a superposition method is applied. For the point location (geometry checks) different possibilities are presented. Advantages and disadvantages of the conventional intersection method and a newly introduced octree method are discussed. The octree method was found to be suited best for threedimensional simulation. Using the octree the CPUtime required for the simulation of one ion trajectory could be reduced so that it only needs approximately the same time as the intersection method in the twodimensional case. Additionally, the data structure of the octree simplifies the coupling of this simulation tool with topography simulators based on a cellular method. Simulation results for a threedimensional trench structure are presented.

