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Analysis of Narrow Emitter Effects in Half-Micron Bipolar Transistors
Youichiro NIITSU Hiroyuki MIYAKAWA Osamu HIDAKA
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/01/25
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
semiconductor devices, bipolar transistors, narrow emitter effects,
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Narrow emitter effects in self-aligned bipolar transistors are discussed. Besides the increase of a non-ideal base current, the decrease of an ideal base current is newly observed, and a consequent fluctuation of the current gain becomes wider in the smaller emitter geometry. Both phenomena are attributed to the reduction of an emitter-impurity concentration.