Analysis of Narrow Emitter Effects in Half-Micron Bipolar Transistors

Youichiro NIITSU  Hiroyuki MIYAKAWA  Osamu HIDAKA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.1   pp.77-80
Publication Date: 1994/01/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
Keyword: 
semiconductor devices,  bipolar transistors,  narrow emitter effects,  

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Summary: 
Narrow emitter effects in self-aligned bipolar transistors are discussed. Besides the increase of a non-ideal base current, the decrease of an ideal base current is newly observed, and a consequent fluctuation of the current gain becomes wider in the smaller emitter geometry. Both phenomena are attributed to the reduction of an emitter-impurity concentration.