Crosstalk Characteristic of Monolithically Integrated Receiver Arrays

Mutsuo IKEDA
Yoshio ITAYA

IEICE TRANSACTIONS on Electronics   Vol.E77-C    No.1    pp.42-49
Publication Date: 1994/01/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Optical Interconnection)
opto-electronics,  interconnection,  opto-electronic integrated circuit,  photoreceiver,  crosstalk,  

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The crosstalk characteristics of a long-wavelength monolithically integrated photoreceiver array are analyzed. The device consists of an array of transimpedance photoreceivers fabricated on a semi-insulating InP substrate. The distance between the photodetectors is large enough to suppress the photonic crosstalk. Therefore, the crosstalk of the device is mainly due to signal propagation from the channels through the power line shared by each channel on the chip. This crosstalk is inevitable to the photoreceiver arrays which employ common power lines. The magnitude of the crosstalk largely depends on the impedance of the power-supply circuit outside the chip. The crosstalk spectrum often has a peak and recess structure. The crosstalk peak at the edge of the operating band-width is due to the resonance characteristic of the transimpedance amplifier. The other peak and recess structures on the spectrum are due to the resonance phenomena of on-chip and off-chip capacitors and inductance on the power-supply line outside the chip. This crosstalk can be reduced by using on-chip bypass capacitance and dumping resistance. However, the resonance due to the capacitance and inductance on the power-supply circuit outside the chip can't be controlled by the on-chip components. Therefore, an optimized design for the power supply circuit outside the chip is also indispensable for suppressing crosstalk.