A Design of Novel nVT Level Shift Circuits Using MOSFETs

Akira HYOGO  Keitaro SEKINE  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E77-A   No.2   pp.394-397
Publication Date: 1994/02/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8508
Type of Manuscript: Special Section LETTER (Special Section on High-Performance MOS Analog Circuits)
Category: 
Keyword: 
MOS analog circuits,  circuit theory,  analog circuits,  electronic circuits,  integrated circuits,  

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Summary: 
Two types of novel nVT level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate VIN+nVT or VIN-nVT (where VT is a threshold voltage), if the input voltage is applied as the VIN. These circuits can be widely used in MOSFET characterization, compensating VT effect, VT measurement, level shifting, etc. Type 1 is directly derived from the nVT-sift circuit proposed by Wang. Type 2 can reduce a total chip area than type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consumption.