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A Design of Novel nVT Level Shift Circuits Using MOSFETs
Akira HYOGO Keitaro SEKINE
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/02/25
Print ISSN: 0916-8508
Type of Manuscript: Special Section LETTER (Special Section on High-Performance MOS Analog Circuits)
MOS analog circuits, circuit theory, analog circuits, electronic circuits, integrated circuits,
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Two types of novel nVT level shift circuits based on the square law characteristics of MOSFETs have been proposed. These circuits generate VIN+nVT or VIN-nVT (where VT is a threshold voltage), if the input voltage is applied as the VIN. These circuits can be widely used in MOSFET characterization, compensating VT effect, VT measurement, level shifting, etc. Type 1 is directly derived from the nVT-sift circuit proposed by Wang. Type 2 can reduce a total chip area than type 1 and has a wider input range. SPICE simulations show that the proposed circuits have a very wide input range and a small power consumption.