Barrier Metal Effect on Electro- and Stress-Migration

Tetsuaki WADA

IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E77-A    No.1    pp.180-186
Publication Date: 1994/01/25
Online ISSN: 
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
semiconductor,  metal,  barrier metal,  reliability electromigration,  stress-migration,  

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A new effect of barrier metal laid under 1st aluminum layer on electromigration has been found in interconnect vias. This effect can be explained by Si nodules at vias. Stress induced open failure occurred at viaholes and depends on the size of the vias. Stress-migration at vias can be prevented by TiN barrier metal between 1st and 2nd metals. Reliability of electro- and stress-migration at interconnect vias can be explosively improved by using TiN barrier metal.

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