Summary: A new effect of barrier metal laid under 1st aluminum layer on electromigration has been found in interconnect vias. This effect can be explained by Si nodules at vias. Stress induced open failure occurred at viaholes and depends on the size of the vias. Stress-migration at vias can be prevented by TiN barrier metal between 1st and 2nd metals. Reliability of electro- and stress-migration at interconnect vias can be explosively improved by using TiN barrier metal.