For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Barrier Metal Effect on Electro- and Stress-Migration
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/01/25
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
semiconductor, metal, barrier metal, reliability electromigration, stress-migration,
Full Text: PDF>>
A new effect of barrier metal laid under 1st aluminum layer on electromigration has been found in interconnect vias. This effect can be explained by Si nodules at vias. Stress induced open failure occurred at viaholes and depends on the size of the vias. Stress-migration at vias can be prevented by TiN barrier metal between 1st and 2nd metals. Reliability of electro- and stress-migration at interconnect vias can be explosively improved by using TiN barrier metal.