First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser

Toshihiko BABA  Yukiaki YOGO  Katsumasa SUZUKI  Fimio KOYAMA  Kenichi IGA  

IEICE TRANSACTIONS on Electronics   Vol.E76-C   No.9   pp.1423-1424
Publication Date: 1993/09/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Opto-Electronics
surface emitting laser,  semiconductor laser,  buried heterostructure,  GaInAsP/InP,  optical fiber communication,  

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We have achieved the room temperature cw lasing operation of GaInAsP/InP surface emitting lasers for the first time. By employing a buried heterostructure with 1.3 µm range active region and a MgO/Si heat sink mirror, cw operation was obtained up to 14 with the threshold current of 22 mA.