Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes

Makoto FUKUSHIMA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E76-C   No.9   pp.1420-1422
Publication Date: 1993/09/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
Keyword: 
semiconductor materials and devices,  QWITT diode,  field-dependent diffusion coefficient,  velocity transient effect,  

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Summary: 
The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.