For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes
IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
semiconductor materials and devices, QWITT diode, field-dependent diffusion coefficient, velocity transient effect,
Full Text: PDF(137.4KB)>>
The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.