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Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation
Yasunobu SAITO Fumio SASAKI Hisao KAWASAKI Hiroshi ISHIMURA Hirokuni TOKUDA Motoharu OHTOMO
IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices)
reliability, HEMT, γ-ray, degradation,
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Gamma(γ)-ray irradiation effects have been investigated on three types of low-noise HEMTs, AlGaAs/GaAs conventional HEMT (conv. HEMT), AlGaAs/InGaAs pseudomorphic HEMT (P-HEMT) and InAlAs/InGaAs/InP HEMT (InP-based HEMT). The dose of irradiated γ-rays ranges from 1105 to 1108 rad. DC and RF characteristics of each type of HEMT are measured before and after irradiation and the parameter changes are investigated. For conv. HEMT and P-HEMT, no degradation of DC parameter is observed up to 108 rad, while noise figure (NF) at 12 GHz remains constant up to 107 rad and degrades by 0.1 dB at 108 rad. The InP-based HEMT shows IDSS and gm increase by about 10% at a dose of 108 rad and its NF at 18 GHz lowers gradually with the radiation dose. It has been found that the radiation hardness is greater than 107 rad for all types of HEMTs and over a hundred years of life can be expected against γ-ray irradiation in the space environment.