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0.15 µm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value
Hidetoshi MATSUMOTO Yasunari UMEMOTO Yoshihisa OHISHI Mitsuharu TAKAHAMA Kenji HIRUMA Hiroto ODA Masaru MIYAZAKI Yoshinori IMAMURA
IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices)
GaAs hetero-FET, HIGFET, short-channel effect, source resistance, K-value,
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We have developed a new HIGFET structure achieving an extremely high K-value of 13.3 S/Vcm with a gate length of 0.15 µm. Self-aligned ion implantation is excluded to suppress a short-channel effect. An i-GaAs cap layer and an n+-GaAs contact layer are employed to reduce source resistance. The threshold voltage shift is as small as 50 mV when the gate length is reduced from 1.5 µm to 0.15 µm. Source resistance is estimated to be 53 mΩcm. We have also developed a new fabrication process that can achieve a shorter gate length than the minimum size of lithography. This process utilizes an SiO2 sidewall formed on the n+-GaAs contact layer to reduce the gate length. A gate length of 0.15 µm can be achieved using 0.35 µm lithography.