Structure and Resistivity of BaBiOy, Ba1-xLaxBiO3, and BaBi1-xLaxO3

Isao SHIME  Shiro KAMBE  Shigetoshi OHSHIMA  Katsuro OKUYAMA  

IEICE TRANSACTIONS on Electronics   Vol.E76-C   No.8   pp.1261-1264
Publication Date: 1993/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Issue on High-Temperature Superconducting Electronics)
structure,  resistivity,  BaBiOy,  Ba1-xLaxBiO3,  BaBc1-xLaxO3,  

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Structure and resistivity of BaBiOy were compared with those of Ba1-xLaxBiO3. Decrease in an average Bi valence from 3.91 to 3.03 for BaBiOy leads to an increase in the lattice parameter c from 4.37 to 4.53 , in the unit cell volume from 81 3 to 87 3, and in the resistivity from 10 Ωcm to 2105 Ωcm. It was found that the increase in the unit cell volume and the resistivity was due to change in the average Bi valence. The resistivity of BaBi1-xLaxO3 was compared with that of BaBiOy and Ba1-xLaxBiO3. We also found that pseudocubic Ba1-xLaxBiO3 remains semiconducting as well as pseudotetragonal BaBiOy. The high resistivity in the Ba1-xLaxBiO3 and the BaBi1-xLaxO3 will be useful to the application for the SIS junction.