Formation of (Ba, Rb) BiO3 Thin Films by Molecular Beam Epitaxy Using Distilled Ozone

Mitsuhiko OGIHARA  Fumihiko TODA  Takehiko MAKITA  Hitoshi ABE  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E76-C    No.8    pp.1251-1260
Publication Date: 1993/08/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on High-Temperature Superconducting Electronics)
Category: 
Keyword: 
(Rb,Ba)BiO3,  MBE,  growth process,  BRBO/STO(Nb),  

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Summary: 
The (100) oriented BaxRb1-xBiO3 (BRBO) thin films were prepared on MgO (100) and SrTiO3(100) (STO(100)) substrate by molecular beam epitaxy using distilled ozone. The (100)-oriented BRBO thin film deposited on STO(100) substrate, showed onset superconducting transition temperature (Tc(onset)) value of 28 K and zero-resistance superconducting transition temperature (Tc(0)) value of 26 K. The respective values for Tc(onset) and Tc(0) of BRBO thin film on MgO(100) substrate were 21 K and 19 K. The growth process of the BRBO thin films grown on MgO(100) and STO(100) substrates were studied by the atomic force microscope (AFM) and the X-ray photoelectron spectroscopy (XPS). Difference in XPS-intensity of Ba as a function of the average thickness for the BRBO thin films deposited on STO(100) substrate and on MgO(100) substrate were observed. The electrical properties of junction using the BRBO thin film and the Nb-doped STO substrate (BRBO/STO(Nb)) was also investigated. The results of the current-voltage measurement and the capacitance-voltage measurement revealed that it is not necessary to take into account the unknown dielectric layer at the interface of BRBO/STO (Nb). It was not possible to interpret well the resistance-temperature behavior of Rb-doped-BaBiO3 thin film (semiconducting BBO(Rb) thin film) with the help of hopping model.