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Epitaxial Growth of Bi (2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method
Kazuo SAKAI Shinji MIGITA Hiroyuki OTA Hiroshi OTERA Ryozo AOKI
IEICE TRANSACTIONS on Electronics
Publication Date: 1993/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on High-Temperature Superconducting Electronics)
ion beam sputtering, BSCCO(2201), ozone, ultraviolet light, superconductor, buffer layer,
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Bi2Sr2CuOx (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.010-5 Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi(2201) oriented along the c-axis is grown.