Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances

Yasushi ITOH
Tadashi TAKAGI
Hiroyuki MASUNO
Masaki KOHNO

IEICE TRANSACTIONS on Electronics   Vol.E76-C    No.6    pp.938-943
Publication Date: 1993/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
amplifier,  wideband,  high power,  HEMT,  bandpass filter,  

Full Text: PDF>>
Buy this Article

A wideband high power amplifier design using a novel band-pass filter with FET's parasitic reactances has been developed. The feature of this design is in that it can provide wide bandwidth and high gain of high power amplifiers. Furthermore, the lower cutoff frequency and bandwidth can be varied independently. With the use of this design, a Ku-band two-stage high power amplifier having a bandwidth of 18% has achieved a linear gain of 9.751.75 dB, a saturated output power of greater than 37 dBm, and a power-added efficiency of greater than 10.4%.