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Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization
Takahide ISHIKAWA Makio KOMARU Kazuhiko ITOH Katsuya KOSAKI Yasuo MITSUI Mutsuyuki OTSUBO Shigeru MITSUI
IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
FIB (Focused Ion Beam), trimming, circuit optimization, MMIC,
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Focused Ion Beam (FIB) trimming techniques for circuit optimization for GaAs MMICs by adjusting the parameters of IC components such as resistors, capacitors, microstrip lines, and FETs have been developed. The adjustment is performed by etching of the components and depositing of metal films for micro-strip lines. This technology turned out to be in need of only half a day to optimize the circuit pattern without any further wafer processes, while a conventional method that is comprised of revising mask pattern and following several cycles of wafer process has needed 0.5-1.0 year requiring huge amount of development cost. This technology has been successfully applied to optimization of an X-band low dissipation current single stage MMIC amplifier, and has shown its great feasibility for shortening the turn around time.