Design Techniques for High-Throughput BiCMOS Self-Timed SRAM's

Koichi YOKOMIZO  Kuniyoshi NAITO  

IEICE TRANSACTIONS on Electronics   Vol.E76-C   No.5   pp.824-829
Publication Date: 1993/05/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on the 1992 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.28, No.4 April 1993))

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This paper describes design techniques for a high-throughput BiCMOS self-timed SRAM. A new BiCMOS read circuit using a pipelined read architecture and a BiCMOS complementary clocked driver (BCCD) are proposed to reduce the operating cycle time. A 8192 9-b dual-port self-timed SRAM designed using the proposed techniques achieved a clock cycle time of 3.0 ns, that is, a 333-MHz operating frequency, by SPICE simulation on model parameters for 0.8-µm BiCMOS technology. A high-speed built-in self-test (BIST) circuit was studied and designed for the 3.0-ns cycle SRAM. It is confirmed that the BIST circuit allows the 3.0-ns cycle SRAM to test at its maximum operating frequency.