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An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4-µm Gate Ultrathin-Film SIMOX Technology
Yuichi KADO Masao SUZUKI Keiichi KOIKE Yasuhisa OMURA Katsutoshi IZUMI
IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
integrated electronics, semiconductor materials and devices, CMOS, SOI, SIMOX, phase locked loop,
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We designed and fabricated a prototype 0.4-µm-gate CMOS/SIMOX PLL LSI in order to verify the potential usefulness of ultrathin-film SIMOX technology for creating an extremely low-power LSI containing high-speed circuits operating at frequencies of at least 1 GHz and at low supply voltages. This PLL LSI contains both high-frequency components such a prescaler and low-frequency components such as a shift register, phase frequency comparator, and fixed divider. One application of the LSI could be for synthesizing communication band frequencies in the front-end of a battery-operated wireless handy terminal for personal communications. At a supply voltage of 2 V, this LSI operates at up to 2 GHz while dissipating only 8.4 mW. Even at only 1.2 V, 1 GHz-operation can be obtained with a power consumption of merely 1.4 mW. To explain this low-power feature, we extensively measured the electrical characteristics of individual CMOS/SIMOX basic circuits as well as transistors. Test results showed that the high performance of the LSI is mainly due to the advanced nature of the CMOS/SIMOX devices with low parasitic capacitances around source/drain regions and to the new circuit design techniques used in the dual-modulus prescalar.