A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method

Yukiharu URAOKA
Kazuhiko TSUJI

IEICE TRANSACTIONS on Electronics   Vol.E76-C    No.4    pp.519-524
Publication Date: 1993/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
reliability,  photon emission,  TDDB,  gate oxide,  LOCOS,  

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A new technique for evaluating gate oxide reliability using photon emission method has been developed. This method enables the measurements of the initial breakdown characteristics, reliability testing and failure analysis consistently. From the experimental results, followings are clarified for the first time using this technique. Failure modes in the initial characteristics have close correlation to TDDB characteristics and both characteristics correspond to the location of breakdown spot. The results suggest measures to improve the reliability of gate oxide and the existance of new failure mechanism.