Synchrotron Radiation Induced Direct Projection Patterning of Aluminum on Si and SiO2 Surfaces


IEICE TRANSACTIONS on Electronics   Vol.E76-C   No.1   pp.47-54
Publication Date: 1993/01/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Opto-Electronics and LSI)
Category: Opto-Electronics Technology for LSIs
synchrotron radiation,  surface modification,  aluminum,  chemical vapor deposition,  reaction control,  growth suppression,  growth initiation,  chemical shift,  

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A new direct projection patterning technique of aluminum using synchrotron radiation (SR) is proposed. It is based on the thermal reaction control effect of SR excitation. In the case of the Si surface, pure thermal growth is possible at 200, however, this growth is suppressed perfectly by SR irradiation. On the other hand, Al growth on the SiO2 surface is impossible at the same temperature thermally, however, SR has an effect to initiate thermal reaction. Both new effects of SR, suppression and initiation, are clarified to be caused by atomic order level thin layers formed from CVD gases by SR excitation on the surfaces. By using these effects, the direct inverse and normal projection patterning of Al are successfully demonstrated.