Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning

Yasuhisa SATO  Rinshi SUGINO  Masaki OKUNO  Toshiro NAKANISHI  Takashi ITO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E76-C   No.1   pp.41-46
Publication Date: 1993/01/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Opto-Electronics and LSI)
Category: Opto-Electronics Technology for LSIs
Keyword: 
dry cleaning,  dielectric breakdown,  Fowler-Nordheim leakage current,  junction leakage current,  metal contamination,  

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Summary: 
Breakdown fields and the charges to breakdown (QBD) of oxides increased after UV/Cl2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH4OH, H2O2 and H2O prior to UV/Cl2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV/Cl2 cleaning as low as those after wet cleaning alone. The large junction leakage currents--caused by metal contaminants introduced during dry etching--decreased after UV/Cl2 cleaning which removes the contaminated layer.