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A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS- and Trench-Isolated MOSFETs
Takashi OHZONE Hideyuki IWATA Yukiharu URAOKA Shinji ODANAKA
IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
CMOS, hot-carrier, photoemission, isolation,
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A two-dimensional photoemission analysis of hot-carrier effects in LOCOS- and trench-isolated CMOS devices with channel width ranging from 160 µm to 0.2 µm is described. Photoemission-intensity profiles can be measured in spatial resolution of 0.1 µm. Different photoemission characteristics are observed in n-MOSFETs depending on isolation technology; M-shaped photoemission-intensity profiles are observed as gate voltage becomes higher in trench-isolated ones, but scarcely measured in LOCOS-isolated ones. As for p-MOSFETs, similar characteristics are observed independent on isolation technology and slightly M-shaped profiles are observed at higher gate voltages. The recession of 0.1-0.2 µm in photoemission area from the gate electrode edge due to gate bias dependence of the pinch-off points of n--LDD drain is observed when gate voltage increases from 1 V to 6 V. Meanwhile the recession of the pinch-off points in p-MOSFETs is less than 0.1 µm even when gate voltage increases from 2 V to 8 V. A qualitative explanation for the experimental results is given for four kinds of MOSFETs in comparing each device structure near the isolation edge.