10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs

Masanobu OHHATA  Minoru TOGASHI  Koichi MURATA  Satoshi YAMAGUCHI Masao SUZUKI  Kazuo HAGIMOTO  

IEICE TRANSACTIONS on Communications   Vol.E76-B   No.7   pp.745-747
Publication Date: 1993/07/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Section of Letters Selected from the 1992 IEICE Fall Conference and the 1993 IEICE Spring Conference)
decision IC,  decision circuit,  GaAs MESFET,  LSCFL,  SCFL interface,  SAINT,  

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This letter reports a high-sensitivity GaAs decision IC for ultra-high-speed optical transmission systems. The IC was designed using LSCFL (Low-power Source Coupled FET Logic) and fabricated with 0.2-µm-gate-length MESFETs with a cut-off frequency of 50GHz. The input voltage sensitivity was 35mV at 10Gbit/s. This is the highest sensitivity ever reported for a MESFET decision IC.