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10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs
Masanobu OHHATA Minoru TOGASHI Koichi MURATA Satoshi YAMAGUCHI Masao SUZUKI Kazuo HAGIMOTO
IEICE TRANSACTIONS on Communications
Publication Date: 1993/07/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Section of Letters Selected from the 1992 IEICE Fall Conference and the 1993 IEICE Spring Conference)
decision IC, decision circuit, GaAs MESFET, LSCFL, SCFL interface, SAINT,
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This letter reports a high-sensitivity GaAs decision IC for ultra-high-speed optical transmission systems. The IC was designed using LSCFL (Low-power Source Coupled FET Logic) and fabricated with 0.2-µm-gate-length MESFETs with a cut-off frequency of 50GHz. The input voltage sensitivity was 35mV at 10Gbit/s. This is the highest sensitivity ever reported for a MESFET decision IC.