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Evaluation of Surface Damage on a Silicon Wafer Induced by Reactive Ion Etching Using X-Ray Photoeloctron Spectroscopy and Electrical Characteristics
Akitaka MURATA Morio NAKAMURA Akira ASAI Ichiro TANIGUCHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials)
XPS, I-V characteristics, RIE with CF4 gas, surface damage, SiF3, CDE with NF3 gas,
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Surface damage to n-type silicon wafers induced by Reactive Ion Etching (RIE) with CF4 gas was evaluated using X-ray photoelectron spectroscopy (XPS) and the current-voltage (I-V) characteristics of Au/n-Si Schottky diodes fabricated on the damaged surface. The reaction products (SiF, SiF2, and SiF3) in the damaged layer were detected by XPS. Assuming the surface damage on a silicon wafer induced by RIE acts as a donor, the donor density was found to be about 21019 cm-3. The distribution of SiF3 and the donor density in the depth direction were almost equal. The thickness of the damaged layer was about 15 nm. These findings suggest that the donor in the damaged layer on a silicon surface induced by RIE may be SiF3.