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Semiconductor Optical Modulator by Using Electron Depleting Absorption Control
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
optical modulator, optical switch, semiconductor,
Full Text: PDF(599.2KB)>>
Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm-1 over wide wavelength range of 30 nm.