Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition

Masaya ICHIMURA  Yukihisa MORIGUCHI  Akira USAMI  Takao WADA  

IEICE TRANSACTIONS on Electronics   Vol.E75-C    No.9    pp.1056-1062
Publication Date: 1992/09/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials)
Raman spectroscopy,  heterostructure,  Ge/Si,  interdiffusion,  lattice-mismatch,  

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A Ge/Si structure grown by chemical vapor deposition (CVD) is angle-lapped and characterized by the micro-Raman spectroscopy. Near the interface, the phonon mode due to the Si-Ge bond is clearly observed, which indicates that a SiGe alloy is formed by the solid-phase interdiffusion at the interface. The thickness of the interfacial alloy layer is about 0.2 µm. Amount of residual strain is estimated by comparing the measured phonon frequencies with those predicted from the composition profie, but the shift due to the residual strain is not appreciable. Both the interdiffusion at the interface and the nearly complete relaxation of the lattice mismatch are attributed to the high growth temperature of the CVD sample.