High Speed Crystallization of a-Si by Lateral Sweep Annealing in Steep Temperature Gradient

Akio KITAGAWA  Masaki TAKEUCHI  Sadaki FUTAGI  Syungo KANAI  Kazunori TUBOTA  Yasuhiro KIZU  Masakuni SUZUKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.9   pp.1031-1035
Publication Date: 1992/09/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
SIO structure,  crystallization,  poly-Si film,  gas flame annealing,  solid phase epitaxy,  

Full Text: PDF>>
Buy this Article



Summary: 
The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).