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High Speed Crystallization of a-Si by Lateral Sweep Annealing in Steep Temperature Gradient
Akio KITAGAWA Masaki TAKEUCHI Sadaki FUTAGI Syungo KANAI Kazunori TUBOTA Yasuhiro KIZU Masakuni SUZUKI
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials)
SIO structure, crystallization, poly-Si film, gas flame annealing, solid phase epitaxy,
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The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).