Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique

Takashi FUYUKI  Takeshi FURUKAWA  Tohru OKA  Hiroyuki MATSUNAMI  

IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.9   pp.1013-1018
Publication Date: 1992/09/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials)
remote plasma CVD,  SiO2,  

Full Text: PDF>>
Buy this Article

Reaction mechanisms in remote plasma CVD (in which plasma excitation of source meterials and film deposition are spatially separated) of SiO2 using activated oxygen species and pure silane (SiH4) were discussed in two destinct cases in a viewpoint of vapor phase reactions. Under high pressures of 50500 mTorr, activated oxygen species and SiH4 could collide with each other many times in the vapor phase. SiH4 was decomposed by chemical reactions due to the collisions generating chemically active precursors such as SiHn (0n3) for film deposition. Nearly stoichiometric films with low hydrogen content were obtained at low temperatures of around 300. Under a pressure of 5 mTorr, the oxygen species and SiH4 could scarcely collide with each other due to a long mean free path resulting no decomposition of SiH4. Insufficient surface reactions between relatively stable SiH4 and activated oxygen species yielded many O-H bonds in deposited films. Electrical properties of the films and the interfaces of SiO2/Si were characterized.