Evaluation of Si Surface Micro-Roughness by Measuring Chlorine Concentration and Total Charge of Native Oxide

Ichiro OKI  Tetsuo BIWA  Jun KUDO  Hikou SHIBAYAMA  

IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.7   pp.809-811
Publication Date: 1992/07/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)
AFM,  STM,  micro-roughness,  HCl/H2O2,  

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We have developed a new method of evaluating Si suface micro-roughness, by forming thin oxide in HCl/H2O2 solution and then measuring the concentration of chlorine atomes and the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface microroughness, obtained by AFM. From this correlation, it is possible to evaluate the surface micro-roughness for large areas compared with the areas of AFM measurement.