Initial Stage of SiO2/Si Interface Formation on Si(111) Surface

Hiroshi NOHIRA  Yoshinari TAMURA  Hiroki OGAWA  Takeo HATTORI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C    No.7    pp.757-763
Publication Date: 1992/07/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
oxidation,  silicon,  H-termination,  XPS,  

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Summary: 
The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300 in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.