Multilayer MMIC Using a 3 µmN-Layer Dielectric Film Structure

Tsuneo TOKUMITSU  Takahiro HIRAOKA  Hiroyuki NAKAMOTO  Masayoshi AIKAWA  

IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.6   pp.698-706
Publication Date: 1992/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology)
monolithic,  multilayer,  dielectric film,  TFMS,  size reduction,  layout flexibility,  

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Novel, very small-size multilayer MMIC's using miniature microstrip lines on a thin dielectric film, as well as the features of the multilayer structure, are presented. Very narrow-width thin-film transmission lines, meander-like configurations, line crossovers, and vertical connections, which are effective for significant chip-size reduction and flexible layout, are realized and utilized in a 2.5-3 µmN-layer dielectric film structure. 180-degree and 90-degree hybrids and umltiport Wilkinson dividers, which are implemented in small areas of 0.1 mm2 and 1.7 mm2, are presented. Furthermore, layout flexibility in the multilayer structure is demonstrated by implementing distributed amplifiers into the layers.