Large-Signal Parameter Modeling for AlGaAs/GaAs HBT and Its Application to a Monolithic 22 GHz-Band Oscillator

Nobuyuki HAYAMA  Jun-ichi SHIMIZU  Kazuhiko HONJO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.6   pp.683-688
Publication Date: 1992/06/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
HBT,  oscillator,  1/f noise,  phase noise,  

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Summary: 
Design consideration, fabrication process, and performance of a fully monolithic 22 GHz-band oscillator implemented using a self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) are described. For optimization of the oscillator circuit parameters, large-signal circuit model parameters extracted from bias dependent small-signal S-parameters have been used to maximumize an output power. The developed oscillator employs a 1.510 µm2 emitter AlGaAs/GaAs HBT fabricated by using a dual sidewall self-aligned process. The fabricated oscillator has exhibited an output power of 6.2 dBm at 22.16 GHz with a collector efficiency of 9.5%, and phase noise of 78 dBc/Hz at 100 kHz off-carrier under free-running condition. These results were in good agreement with the large-signal designed results obtained using harmonic balance simulator.