High-Power Millimeter Wave MMIC Amplifier Design Using Improved Load-Pull Method

Kazuo NAGATOMO  Shoichi KOIKE  Naofumi OKUBO  Masafumi SHIGAKI  

IEICE TRANSACTIONS on Electronics   Vol.E75-C    No.6    pp.663-668
Publication Date: 1992/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology)
MMIC,  large-signal,  high-power amplifier load-pull,  millimeter-wave,  

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This paper describes the design of a 38-GHz high power MMIC amplifier using an improved load-pull technique. We improved the load-pull technique accuracy by using MMIC transtormers to match the input and output impedances of a GaAs MESFET to about 50 ohms. We used this technique to measure the large-signal load impedance of a FET with a 600-µm-wide gate. Using the data obtained, we developed an MMIC amplifier composed of two of these FET cells. At 38 GHz, the amplifier has an output power of 23.5 dBm for a 1 dB gain compression level.