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Cold Cathode with SIS Tunnel Junction
Tetsuya TAKAMI Kazuyoshi KOJIMA Takashi NOGUCHI Koichi HAMANAKA
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/05/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Superconductive Electronics
Full Text: PDF(437.5KB)>>
The energy distribution and emission efficiency of electrons emitted from a superconductor-insulator-superconductor (SIS) junction have been investigated by numerical calculation adopting the free electron model. The emission efficiency of an SIS junction cold cathode was found to be about 0.3% of tunneling current flowing to the SIS junction when the energy gap voltage of superconductor was 20 meV, the work function of counter electrode 1 eV, the bias voltage 0.96 V, the thickness of the counter electrode 100 , the electric field strength between the plate and the counter electrode 106 V/m, and the relaxation time 0.01 ps. It is clear that the SIS junction cold cathode can emit electrons with sharper energy distributions at much the same efficiency as compared with a metal-insulator-metal (MIM) junction cold cathode.