Cold Cathode with SIS Tunnel Junction

Tetsuya TAKAMI
Kazuyoshi KOJIMA
Takashi NOGUCHI
Koichi HAMANAKA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C    No.5    pp.604-609
Publication Date: 1992/05/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Superconductive Electronics
Keyword: 
superconductive electronics,  

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Summary: 
The energy distribution and emission efficiency of electrons emitted from a superconductor-insulator-superconductor (SIS) junction have been investigated by numerical calculation adopting the free electron model. The emission efficiency of an SIS junction cold cathode was found to be about 0.3% of tunneling current flowing to the SIS junction when the energy gap voltage of superconductor was 20 meV, the work function of counter electrode 1 eV, the bias voltage 0.96 V, the thickness of the counter electrode 100 , the electric field strength between the plate and the counter electrode 106 V/m, and the relaxation time 0.01 ps. It is clear that the SIS junction cold cathode can emit electrons with sharper energy distributions at much the same efficiency as compared with a metal-insulator-metal (MIM) junction cold cathode.