High-Power Microwave Transmit-Receive Switch with Series and Shunt GaAs FETs

Makoto MATSUNAGA
Kazuhiko NAKAHARA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C    No.2    pp.252-258
Publication Date: 1992/02/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
microwave and millimeter wave technology,  

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Summary: 
A new monolithic transmit-receive GaAs FET switch has been developed, named the FET series-shunt connected TR switch and capable of switching high rf transmitting power. Both insertion loss and isolation limitations of this type TR switch have been analyzed using the switching cutoff frequency of the control FET, and the formula for calculating the rated power is provided. A unique feature of this switch is that the power handling of the switch is not limited by the FET gate break-down voltage but is limited by the saturation current, so higher handling power capability is available by using FETs with a larger gate periphery. A design example of the TR switch at a rated power of 8 W in the transmit mode as well as the results of an X band switch are presented.