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An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonics Expansion
Davide VENTURA Antonio GNUDI Giorgo BACCARANI
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
TCAD, BTE, hot-electron effects, electron energy distribution,
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A spherical-harmonics expansion method is used to find approximate numerical solutions of the Boltzmann Transport Equation in the homogeneous case. Acoustic and optical phonon scattering, ionized impurity scattering as well as an energy band structure fitting the silicon density of states up to 2.6 eV above the conduction-band edge are used in the model. Comparisons with Monte Carlo data show excellent agreement, and prove that detailed information on the high-energy tail of the distribution function can be obtained at very low cost using this methodology.