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Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs
Anna PIERANTONI Paolo CIAMPOLINI Antonio GNUDI Giorgio BACCARANI
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
TCAD, device simulation, hot-electron effects, recessed-oxide MOSFETs,
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In this paper, a "hydrodynamic" version of the three-dimensional code HFIELDS-3D is used to achieve a detailed knowledge on the distribution of the substrate current inside a recessed-oxide MOSFET. The physical model features a temperature-dependent formulation of the impact-ionization rate, allowing non-local effects to be accounted for. The discretization strategy relies on the Box Integration scheme and uses suitable generalizations of the Scharfetter-Gummel technique for the energy-balance equation. The simulation results show that the narrow-channel effect has a different impact on drain and substrate currents. Further three-dimensional effects, such as the extra heating of the carriers at the channel edge, are demonstrated.