An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration

Naoyuki SHIGYO  Noritoshi KONISHI  Hideki SATAKE  

IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.2   pp.156-160
Publication Date: 1992/02/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
bandgap narrowing,  device simulation,  bipolar device,  

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We present a new apparent bandgap narrowing model for semiconductor device simulation. The new model is derived from revised data of previous measurements on the apparent bandgap narrowing by using a corrected intrinsic carrier concentration. The revised values reveal sufficient agreement with our theoretical calculation. The new model is implemented in a triangular mesh device simulator TRIMEDES. Simulated BJT current-voltage and current-temperature characteristics using the proposed model reveal excellent agreement with measurements.