Process Simulation for Laser Recrystallization

Bo HU  Albert SEIDL  Gertraud NEUMAYER  Reinhold BUCHNER  Karl HABERGER  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.2   pp.138-144
Publication Date: 1992/02/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
process simulation,  laser recrystallization,  crystal growth,  grain boundary,  micro-absorber,  

Full Text: PDF(961.2KB)>>
Buy this Article




Summary: 
Modeling and numerical simulation of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations a new concept called micro-absorber was introduced for obtaining defect-free Si films.