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Static Characteristics of GaInAsP/InP Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes (GRIN-SCH QW LDs) Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
Akihiko KASUKAWA Narihito MATSUMOTO Takeshi NAMEGAYA Yoshihiro IMAJO
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
GRIN-SCH-MQW, MOCVD, GaInAsP/InP, buried heterostructure, laser diodes,
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The static characteristics of GaInAs(P)/GaInAsP quantum well laser diodes (QW LDs), with graded-index separate-confinement-heterostructure (GRIN-SCH) grown by metalorganic chemical vapor deposition (MOCVD), have been investigated experimentally in terms of threshold current density, internal waveguide loss, differential quantum efficiency and light output power. Very low threshold current density of 410 A/cm2, high characteristic temperature of 113 K, low internal waveguide loss of 5 cm-1, high differential quantum efficiency of 82% and high light output power of 100 mW were obtained in 1.3 µm GRIN-SCH multiple quantum well (MQW) LDs by optimizing the quantum well structure including confinement layer and cavity design. Excellent uniformity for the threshold current, quantum efficiency and emission wavelength was obtained in all MOCVD grown buried heterostructure GRIN-SCH MQW LDs. Lasing characteristics of 1.5 µm GRIN-SCH MQW LDs are also described.