Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation

Koichi IIYAMA  Ken-ichi HAYASHI  Yoshio IDA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.12   pp.1536-1540
Publication Date: 1992/12/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Opto-Electronics
Keyword: 
opto-electronics,  semiconductor laser,  optical injection-locking,  gain saturation,  

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Summary: 
Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.