For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation
Koichi IIYAMA Ken-ichi HAYASHI Yoshio IDA
IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
opto-electronics, semiconductor laser, optical injection-locking, gain saturation,
Full Text: PDF(350.2KB)>>
Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.